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GD25S512MDBIGY


Part Number GD25S512MDBIGY
Zouser Part # GD25S512MDBIGY
Manufacturer GigaDevice Semiconductor (HK) Limited
Category SemiconductorsMemory ICsMemory
Description NOR FLASH
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models GD25S512MDBIGY PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock508 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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GD25S512MDBIGY Specifications

Part Number GD25S512MDBIGY
Brand GigaDevice Semiconductor (HK) Limited
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Memory ICs
Subcategory Memory
Manufacturer GigaDevice Semiconductor (HK) Limited
Series -
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mb (64M x 8)
Memory Interface SPI - Quad I/O
Clock Frequency 104MHz
Write Cycle Time - Word, Page 50µs, 2.4ms
Access Time -
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 24-TBGA
Supplier Device Package 24-TFBGA (6x8)

GD25S512MDBIGY Documents

GD25S512MDBIGY, GD25S512MDBIGY Datasheet (Total Pages: 28, Size: 4,295.75 KB)
GD25VE32CVIGR Datasheet CoverGD25VE32CVIGR Datasheet Page 2GD25VE32CVIGR Datasheet Page 3GD25VE32CVIGR Datasheet Page 4GD25VE32CVIGR Datasheet Page 5GD25VE32CVIGR Datasheet Page 6GD25VE32CVIGR Datasheet Page 7GD25VE32CVIGR Datasheet Page 8GD25VE32CVIGR Datasheet Page 9GD25VE32CVIGR Datasheet Page 10GD25VE32CVIGR Datasheet Page 11GD25VE32CVIGR Datasheet Page 12GD25VE32CVIGR Datasheet Page 13GD25VE32CVIGR Datasheet Page 14

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