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GP1M006A070FH


Part Number GP1M006A070FH
Zouser Part # GP1M006A070FH
Manufacturer Global Power Technologies Group
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 700V 5A TO220F
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models GP1M006A070FH PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock451 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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GP1M006A070FH Specifications

Part Number GP1M006A070FH
Brand Global Power Technologies Group
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Global Power Technologies Group
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.65Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
FET Feature -
Power Dissipation (Max) 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack

GP1M006A070FH Documents

GP1M006A070FH, GP1M006A070FH Datasheet (Total Pages: 7, Size: 722.95 KB)
GP1M006A070FH Datasheet CoverGP1M006A070FH Datasheet Page 2GP1M006A070FH Datasheet Page 3GP1M006A070FH Datasheet Page 4GP1M006A070FH Datasheet Page 5GP1M006A070FH Datasheet Page 6GP1M006A070FH Datasheet Page 7

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