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GP1M007A090H


Part Number GP1M007A090H
Zouser Part # GP1M007A090H
Manufacturer Global Power Technologies Group
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 900V 7A TO220
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models GP1M007A090H PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock554 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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GP1M007A090H Specifications

Part Number GP1M007A090H
Brand Global Power Technologies Group
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Global Power Technologies Group
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1969pF @ 25V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

GP1M007A090H Documents

GP1M007A090H, GP1M007A090H Datasheet (Total Pages: 7, Size: 660.91 KB)
GP1M007A090H Datasheet CoverGP1M007A090H Datasheet Page 2GP1M007A090H Datasheet Page 3GP1M007A090H Datasheet Page 4GP1M007A090H Datasheet Page 5GP1M007A090H Datasheet Page 6GP1M007A090H Datasheet Page 7

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