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GP2M002A060PG


Part Number GP2M002A060PG
Zouser Part # GP2M002A060PG
Manufacturer Global Power Technologies Group
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 2A
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models GP2M002A060PG PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock260 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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GP2M002A060PG Specifications

Part Number GP2M002A060PG
Brand Global Power Technologies Group
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Global Power Technologies Group
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
FET Feature -
Power Dissipation (Max) 52.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

GP2M002A060PG Documents

GP2M002A060PG, GP2M002A060PG Datasheet (Total Pages: 6, Size: 523.07 KB)
GP2M002A060PG Datasheet CoverGP2M002A060PG Datasheet Page 2GP2M002A060PG Datasheet Page 3GP2M002A060PG Datasheet Page 4GP2M002A060PG Datasheet Page 5GP2M002A060PG Datasheet Page 6

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