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GP2M011A090NG


Part Number GP2M011A090NG
Zouser Part # GP2M011A090NG
Manufacturer Global Power Technologies Group
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 900V 11A TO3PN
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models GP2M011A090NG PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock574 - More on Order
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Lead-TimeTo be Confirmed
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GP2M011A090NG Specifications

Part Number GP2M011A090NG
Brand Global Power Technologies Group
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Global Power Technologies Group
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 25V
FET Feature -
Power Dissipation (Max) 416W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PN
Package / Case TO-3P-3, SC-65-3

GP2M011A090NG Documents

GP2M011A090NG, GP2M011A090NG Datasheet (Total Pages: 5, Size: 591.23 KB)
GP2M011A090NG Datasheet CoverGP2M011A090NG Datasheet Page 2GP2M011A090NG Datasheet Page 3GP2M011A090NG Datasheet Page 4GP2M011A090NG Datasheet Page 5

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