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GT10J312(Q) |
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Part Number | GT10J312(Q) |
Zouser Part # | GT10J312-Q |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › IGBTs - Single |
Description | IGBT 600V 10A 60W TO220SM |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | GT10J312(Q) PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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In Stock | 486 - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
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1000 | $ 0.0000 | $ 0.0000 |
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GT10J312(Q) Specifications
Part Number | GT10J312(Q) | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | IGBTs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
IGBT Type | - | |
Voltage - Collector Emitter Breakdown (Max) | 600V | |
Current - Collector (Ic) (Max) | 10A | |
Current - Collector Pulsed (Icm) | 20A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A | |
Power - Max | 60W | |
Switching Energy | - | |
Input Type | Standard | |
Gate Charge | - | |
Td (on/off) @ 25°C | 400ns/400ns | |
Test Condition | 300V, 10A, 100Ohm, 15V | |
Reverse Recovery Time (trr) | 200ns | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Supplier Device Package | TO-220SM |
GT10J312(Q) Documents

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