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GT60N321(Q)


Part Number GT60N321(Q)
Zouser Part # GT60N321-Q
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsIGBTs - Single
Description IGBT 1000V 60A 170W TO3P LH
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models GT60N321(Q) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock557 - More on Order
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GT60N321(Q) Specifications

Part Number GT60N321(Q)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory IGBTs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1000V
Current - Collector (Ic) (Max) 60A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
Power - Max 170W
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 330ns/700ns
Test Condition -
Reverse Recovery Time (trr) 2.5µs
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3PL
Supplier Device Package TO-3P(LH)

GT60N321(Q) Documents

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