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H11B1M


Part Number H11B1M
Zouser Part # H11B1M
Manufacturer ON Semiconductor
Category SemiconductorsIsolatorsOptoisolators - Transistor, Photovoltaic Output
Description OPTOISO 4.17KV DARL W/BASE 6DIP
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models H11B1M PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock560 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
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H11B1M Specifications

Part Number H11B1M
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Isolators
Subcategory Optoisolators - Transistor, Photovoltaic Output
Manufacturer ON Semiconductor
Series -
Number of Channels 1
Voltage - Isolation 4170Vrms
Current Transfer Ratio (Min) 500% @ 1mA
Current Transfer Ratio (Max) -
Turn On / Turn Off Time (Typ) 25µs, 18µs
Rise / Fall Time (Typ) -
Input Type DC
Output Type Darlington with Base
Voltage - Output (Max) 30V
Current - Output / Channel 150mA
Voltage - Forward (Vf) (Typ) 1.2V
Current - DC Forward (If) (Max) 80mA
Vce Saturation (Max) 1V
Operating Temperature -40°C ~ 100°C
Mounting Type Through Hole
Package / Case 6-DIP (0.300", 7.62mm)
Supplier Device Package 6-DIP

H11B1M Documents

H11B1M, H11B1M Datasheet (Total Pages: 14, Size: 399.52 KB)
4N29TVM Datasheet Cover4N29TVM Datasheet Page 24N29TVM Datasheet Page 34N29TVM Datasheet Page 44N29TVM Datasheet Page 54N29TVM Datasheet Page 64N29TVM Datasheet Page 74N29TVM Datasheet Page 84N29TVM Datasheet Page 94N29TVM Datasheet Page 104N29TVM Datasheet Page 114N29TVM Datasheet Page 124N29TVM Datasheet Page 134N29TVM Datasheet Page 14

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