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H7N1002LSTL-E


Part Number H7N1002LSTL-E
Zouser Part # H7N1002LSTL-E
Manufacturer Renesas Electronics America
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V LDPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models H7N1002LSTL-E PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock257 - More on Order
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Lead-TimeTo be Confirmed
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H7N1002LSTL-E Specifications

Part Number H7N1002LSTL-E
Brand Renesas Electronics America
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Renesas Electronics America
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 75A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9700pF @ 10V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-LDPAK
Package / Case SC-83

H7N1002LSTL-E Documents

H7N1002LSTL-E, H7N1002LSTL-E Datasheet (Total Pages: 11, Size: 154.5 KB)
H7N1002LSTL-E Datasheet CoverH7N1002LSTL-E Datasheet Page 2H7N1002LSTL-E Datasheet Page 3H7N1002LSTL-E Datasheet Page 4H7N1002LSTL-E Datasheet Page 5H7N1002LSTL-E Datasheet Page 6H7N1002LSTL-E Datasheet Page 7H7N1002LSTL-E Datasheet Page 8H7N1002LSTL-E Datasheet Page 9H7N1002LSTL-E Datasheet Page 10H7N1002LSTL-E Datasheet Page 11

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