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HIP2100EIBZT


Part Number HIP2100EIBZT
Zouser Part # HIP2100EIBZT
Manufacturer Renesas Electronics America Inc.
Category SemiconductorsPower Management ICsGate Drivers
Description IC DRIVER HALF BRDG 100V 8EPSOIC
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HIP2100EIBZT PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock532 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
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HIP2100EIBZT Specifications

Part Number HIP2100EIBZT
Brand Renesas Electronics America Inc.
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Power Management ICs
Subcategory Gate Drivers
Manufacturer Renesas Electronics America Inc.
Series -
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 9V ~ 14V
Logic Voltage - VIL, VIH 4V, 7V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 114V
Rise / Fall Time (Typ) 10ns, 10ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package 8-SOIC-EP

HIP2100EIBZT Documents

HIP2100EIBZT, HIP2100EIBZT Datasheet (Total Pages: 13, Size: 742.81 KB)
HIP2100IRT Datasheet CoverHIP2100IRT Datasheet Page 2HIP2100IRT Datasheet Page 3HIP2100IRT Datasheet Page 4HIP2100IRT Datasheet Page 5HIP2100IRT Datasheet Page 6HIP2100IRT Datasheet Page 7HIP2100IRT Datasheet Page 8HIP2100IRT Datasheet Page 9HIP2100IRT Datasheet Page 10HIP2100IRT Datasheet Page 11HIP2100IRT Datasheet Page 12HIP2100IRT Datasheet Page 13

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