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HIP2101EIBZT


Part Number HIP2101EIBZT
Zouser Part # HIP2101EIBZT
Manufacturer Renesas Electronics America Inc.
Category SemiconductorsPower Management ICsGate Drivers
Description IC DRIVER HALF BRDG 100V 8EPSOIC
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HIP2101EIBZT PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock8,196 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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HIP2101EIBZT Specifications

Part Number HIP2101EIBZT
Brand Renesas Electronics America Inc.
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Power Management ICs
Subcategory Gate Drivers
Manufacturer Renesas Electronics America Inc.
Series -
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 9V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 114V
Rise / Fall Time (Typ) 10ns, 10ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package 8-SOIC-EP

HIP2101EIBZT Documents

HIP2101EIBZT, HIP2101EIBZT Datasheet (Total Pages: 13, Size: 734.27 KB)
HIP2101IRT Datasheet CoverHIP2101IRT Datasheet Page 2HIP2101IRT Datasheet Page 3HIP2101IRT Datasheet Page 4HIP2101IRT Datasheet Page 5HIP2101IRT Datasheet Page 6HIP2101IRT Datasheet Page 7HIP2101IRT Datasheet Page 8HIP2101IRT Datasheet Page 9HIP2101IRT Datasheet Page 10HIP2101IRT Datasheet Page 11HIP2101IRT Datasheet Page 12HIP2101IRT Datasheet Page 13

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