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HN1B01FU-Y(L,F,T) |
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Part Number | HN1B01FU-Y(L,F,T) |
Zouser Part # | HN1B01FU-Y-L-F-T |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › Bipolar (BJT) - Arrays |
Description | TRANS NPN/PNP 50V 0.15A US6 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | HN1B01FU-Y(L,F,T) PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
In Stock | 309 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | Can Ship Immediately |
Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQQty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
HN1B01FU-Y(L,F,T) Specifications
Part Number | HN1B01FU-Y(L,F,T) | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - Arrays | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
Transistor Type | NPN, PNP | |
Current - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V | |
Power - Max | 200mW | |
Frequency - Transition | 120MHz | |
Operating Temperature | 125°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 6-TSSOP, SC-88, SOT-363 | |
Supplier Device Package | US6 |
HN1B01FU-Y(L,F,T) Documents
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