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HN1B01FU-Y(L,F,T)


Part Number HN1B01FU-Y(L,F,T)
Zouser Part # HN1B01FU-Y-L-F-T
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Arrays
Description TRANS NPN/PNP 50V 0.15A US6
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HN1B01FU-Y(L,F,T) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock309 - More on Order
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HN1B01FU-Y(L,F,T) Specifications

Part Number HN1B01FU-Y(L,F,T)
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Arrays
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Power - Max 200mW
Frequency - Transition 120MHz
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6

HN1B01FU-Y(L,F,T) Documents

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