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HN3C51F-GR(TE85L,F


Part Number HN3C51F-GR(TE85L,F
Zouser Part # HN3C51F-GR-TE85L-F
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Arrays
Description TRANS 2NPN 120V 0.1A SM6
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models HN3C51F-GR(TE85L,F PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock532 - More on Order
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HN3C51F-GR(TE85L,F Specifications

Part Number HN3C51F-GR(TE85L,F
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Arrays
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 300mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Supplier Device Package SM6

HN3C51F-GR(TE85L,F Documents

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