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HN4B01JE(TE85L,F)
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HN4B01JE(TE85L,F)


Part Number HN4B01JE(TE85L,F)
Zouser Part # HN4B01JE-TE85L-F
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsBipolar (BJT) - Arrays
Description TRANS NPN/PNP 50V 0.15A ESV PLN
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HN4B01JE(TE85L,F) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock188 - More on Order
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HN4B01JE(TE85L,F) Specifications

Part Number HN4B01JE(TE85L,F)
Brand Toshiba Semiconductor and Storage
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Arrays
Manufacturer Toshiba Semiconductor and Storage
Series -
Transistor Type NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10MA, 100MA
Power - Max 100mW
Frequency - Transition 80MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-553
Supplier Device Package ESV

HN4B01JE(TE85L,F) Documents

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