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HYB25D128800CE-6
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HYB25D128800CE-6


Part Number HYB25D128800CE-6
Zouser Part # HYB25D128800CE-6
Manufacturer Qimonda
Category SemiconductorsMemory ICsMemory
Description IC DRAM 128M PARALLEL 66TSOP II
Lifecycle Discontinued
RoHS No RoHS Information
EDA/CAD Models HYB25D128800CE-6 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock352 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

Pricing (USD)

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HYB25D128800CE-6 Specifications

Part Number HYB25D128800CE-6
Brand Qimonda
Lifecycle Discontinued
RoHS No RoHS Information
Product Line Semiconductors
Category Memory ICs
Subcategory Memory
Manufacturer Qimonda
Series -
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR
Memory Size 128Mb (16M x 8)
Memory Interface Parallel
Clock Frequency 166MHz
Write Cycle Time - Word, Page -
Access Time -
Voltage - Supply 2.3V ~ 2.7V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package 66-TSOP II

HYB25D128800CE-6 Documents

HYB25D128800CE-6, HYB25D128800CE-6 Datasheet (Total Pages: 35, Size: 1,979.09 KB)
HYB25D128800CE-6 Datasheet CoverHYB25D128800CE-6 Datasheet Page 2HYB25D128800CE-6 Datasheet Page 3HYB25D128800CE-6 Datasheet Page 4HYB25D128800CE-6 Datasheet Page 5HYB25D128800CE-6 Datasheet Page 6HYB25D128800CE-6 Datasheet Page 7HYB25D128800CE-6 Datasheet Page 8HYB25D128800CE-6 Datasheet Page 9HYB25D128800CE-6 Datasheet Page 10HYB25D128800CE-6 Datasheet Page 11HYB25D128800CE-6 Datasheet Page 12HYB25D128800CE-6 Datasheet Page 13HYB25D128800CE-6 Datasheet Page 14

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