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IGT60R070D1ATMA1


Part Number IGT60R070D1ATMA1
Zouser Part # IGT60R070D1ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description IC GAN FET 600V 60A 8HSOF
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IGT60R070D1ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 29 - Dec 4 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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IGT60R070D1ATMA1 Specifications

Part Number IGT60R070D1ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolGaN™
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 400V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-3
Package / Case 8-PowerSFN

IGT60R070D1ATMA1 Documents

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