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IPB05CN10N G


Part Number IPB05CN10N G
Zouser Part # IPB05CN10N-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 100A TO263-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB05CN10N G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock328 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
Minimum1

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Qty.Unit PriceExt. Price
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100$ 0.0000$ 0.0000
500$ 0.0000$ 0.0000
1000$ 0.0000$ 0.0000

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IPB05CN10N G Specifications

Part Number IPB05CN10N G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 50V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB05CN10N G Documents

IPB05CN10N G, IPB05CN10N G Datasheet (Total Pages: 11, Size: 775.4 KB)
IPI05CN10N G Datasheet CoverIPI05CN10N G Datasheet Page 2IPI05CN10N G Datasheet Page 3IPI05CN10N G Datasheet Page 4IPI05CN10N G Datasheet Page 5IPI05CN10N G Datasheet Page 6IPI05CN10N G Datasheet Page 7IPI05CN10N G Datasheet Page 8IPI05CN10N G Datasheet Page 9IPI05CN10N G Datasheet Page 10IPI05CN10N G Datasheet Page 11

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