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IPB06N03LAT


Part Number IPB06N03LAT
Zouser Part # IPB06N03LAT
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 25V 50A D2PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB06N03LAT PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock201 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

Pricing (USD)

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Qty.Unit PriceExt. Price
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100$ 0.0000$ 0.0000
500$ 0.0000$ 0.0000
1000$ 0.0000$ 0.0000

Zouser will offer the most competitive prices for you, please refer to the quotations.

IPB06N03LAT Specifications

Part Number IPB06N03LAT
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2653pF @ 15V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB06N03LAT Documents

IPB06N03LAT, IPB06N03LAT Datasheet (Total Pages: 9, Size: 276.2 KB)
IPB06N03LA G Datasheet CoverIPB06N03LA G Datasheet Page 2IPB06N03LA G Datasheet Page 3IPB06N03LA G Datasheet Page 4IPB06N03LA G Datasheet Page 5IPB06N03LA G Datasheet Page 6IPB06N03LA G Datasheet Page 7IPB06N03LA G Datasheet Page 8IPB06N03LA G Datasheet Page 9

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