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IPB09N03LAT


Part Number IPB09N03LAT
Zouser Part # IPB09N03LAT
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 25V 50A D2PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB09N03LAT PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock354 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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100$ 0.0000$ 0.0000
500$ 0.0000$ 0.0000
1000$ 0.0000$ 0.0000

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IPB09N03LAT Specifications

Part Number IPB09N03LAT
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1642pF @ 15V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB09N03LAT Documents

IPB09N03LAT, IPB09N03LAT Datasheet (Total Pages: 9, Size: 276.26 KB)
IPB09N03LA G Datasheet CoverIPB09N03LA G Datasheet Page 2IPB09N03LA G Datasheet Page 3IPB09N03LA G Datasheet Page 4IPB09N03LA G Datasheet Page 5IPB09N03LA G Datasheet Page 6IPB09N03LA G Datasheet Page 7IPB09N03LA G Datasheet Page 8IPB09N03LA G Datasheet Page 9

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