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IPB10N03LB


Part Number IPB10N03LB
Zouser Part # IPB10N03LB
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 50A D2PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB10N03LB PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock509 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
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IPB10N03LB Specifications

Part Number IPB10N03LB
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1639pF @ 15V
FET Feature -
Power Dissipation (Max) 58W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

IPB10N03LB Documents

IPB10N03LB, IPB10N03LB Datasheet (Total Pages: 9, Size: 204.52 KB)
IPB10N03LB G Datasheet CoverIPB10N03LB G Datasheet Page 2IPB10N03LB G Datasheet Page 3IPB10N03LB G Datasheet Page 4IPB10N03LB G Datasheet Page 5IPB10N03LB G Datasheet Page 6IPB10N03LB G Datasheet Page 7IPB10N03LB G Datasheet Page 8IPB10N03LB G Datasheet Page 9

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