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IPB114N03L G


Part Number IPB114N03L G
Zouser Part # IPB114N03L-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 30A TO263-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB114N03L G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock109 - More on Order
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Lead-TimeCan Ship Immediately
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IPB114N03L G Specifications

Part Number IPB114N03L G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V
FET Feature -
Power Dissipation (Max) 38W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB114N03L G Documents

IPB114N03L G, IPB114N03L G Datasheet (Total Pages: 10, Size: 615.71 KB)
IPB114N03L G Datasheet CoverIPB114N03L G Datasheet Page 2IPB114N03L G Datasheet Page 3IPB114N03L G Datasheet Page 4IPB114N03L G Datasheet Page 5IPB114N03L G Datasheet Page 6IPB114N03L G Datasheet Page 7IPB114N03L G Datasheet Page 8IPB114N03L G Datasheet Page 9IPB114N03L G Datasheet Page 10

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