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IPB120N08S403ATMA1


Part Number IPB120N08S403ATMA1
Zouser Part # IPB120N08S403ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH TO263-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPB120N08S403ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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IPB120N08S403ATMA1 Specifications

Part Number IPB120N08S403ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 223µA
Gate Charge (Qg) (Max) @ Vgs 167nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11550pF @ 25V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB120N08S403ATMA1 Documents

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