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IPB160N04S4H1ATMA1


Part Number IPB160N04S4H1ATMA1
Zouser Part # IPB160N04S4H1ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 40V 160A TO263-7
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPB160N04S4H1ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock3,640 - More on Order
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Lead-TimeTo be Confirmed
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IPB160N04S4H1ATMA1 Specifications

Part Number IPB160N04S4H1ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 137nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10920pF @ 25V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)

IPB160N04S4H1ATMA1 Documents

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