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IPB35N12S3L26ATMA1


Part Number IPB35N12S3L26ATMA1
Zouser Part # IPB35N12S3L26ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CHANNEL_100+
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPB35N12S3L26ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock431 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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IPB35N12S3L26ATMA1 Specifications

Part Number IPB35N12S3L26ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series *
FET Type -
Technology -
Drain to Source Voltage (Vdss) -
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Mounting Type -
Supplier Device Package -
Package / Case -

IPB35N12S3L26ATMA1 Documents

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