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IPB60R380P6ATMA1


Part Number IPB60R380P6ATMA1
Zouser Part # IPB60R380P6ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V TO263-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB60R380P6ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock531 - More on Order
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Lead-TimeTo be Confirmed
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IPB60R380P6ATMA1 Specifications

Part Number IPB60R380P6ATMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™ P6
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 877pF @ 100V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB60R380P6ATMA1 Documents

IPB60R380P6ATMA1, IPB60R380P6ATMA1 Datasheet (Total Pages: 18, Size: 2,239.04 KB)
IPB60R380P6ATMA1 Datasheet CoverIPB60R380P6ATMA1 Datasheet Page 2IPB60R380P6ATMA1 Datasheet Page 3IPB60R380P6ATMA1 Datasheet Page 4IPB60R380P6ATMA1 Datasheet Page 5IPB60R380P6ATMA1 Datasheet Page 6IPB60R380P6ATMA1 Datasheet Page 7IPB60R380P6ATMA1 Datasheet Page 8IPB60R380P6ATMA1 Datasheet Page 9IPB60R380P6ATMA1 Datasheet Page 10IPB60R380P6ATMA1 Datasheet Page 11IPB60R380P6ATMA1 Datasheet Page 12IPB60R380P6ATMA1 Datasheet Page 13IPB60R380P6ATMA1 Datasheet Page 14

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