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IPB65R190C6ATMA1


Part Number IPB65R190C6ATMA1
Zouser Part # IPB65R190C6ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 650V 20.2A TO263
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB65R190C6ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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IPB65R190C6ATMA1 Specifications

Part Number IPB65R190C6ATMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 100V
FET Feature -
Power Dissipation (Max) 151W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB65R190C6ATMA1 Documents

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