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IPB80P04P4L08ATMA1 |
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Part Number | IPB80P04P4L08ATMA1 |
Zouser Part # | IPB80P04P4L08ATMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P-CH TO263-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPB80P04P4L08ATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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Quick Inquiry
In Stock | 433 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQQty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
IPB80P04P4L08ATMA1 Specifications
Part Number | IPB80P04P4L08ATMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | Automotive, AEC-Q101, OptiMOS™ | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 40V | |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 7.9mOhm @ 80A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 120µA | |
Gate Charge (Qg) (Max) @ Vgs | 92nC @ 10V | |
Vgs (Max) | ±16V | |
Input Capacitance (Ciss) (Max) @ Vds | 5430pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 75W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO263-3-2 | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IPB80P04P4L08ATMA1 Documents
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