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IPC26N12NX1SA1


Part Number IPC26N12NX1SA1
Zouser Part # IPC26N12NX1SA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 120V 1A SAWN ON FOIL
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPC26N12NX1SA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock311 - More on Order
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IPC26N12NX1SA1 Specifications

Part Number IPC26N12NX1SA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 1A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 244µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package Sawn on foil
Package / Case Die

IPC26N12NX1SA1 Documents

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