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IPC50N04S55R8ATMA1


Part Number IPC50N04S55R8ATMA1
Zouser Part # IPC50N04S55R8ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CHANNEL 40V 50A 8TDSON
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPC50N04S55R8ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock49,507 - More on Order
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IPC50N04S55R8ATMA1 Specifications

Part Number IPC50N04S55R8ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 25V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-33
Package / Case 8-PowerTDFN

IPC50N04S55R8ATMA1 Documents

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