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IPD060N03LGBTMA1


Part Number IPD060N03LGBTMA1
Zouser Part # IPD060N03LGBTMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 50A TO252-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPD060N03LGBTMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock605 - More on Order
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IPD060N03LGBTMA1 Specifications

Part Number IPD060N03LGBTMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 15V
FET Feature -
Power Dissipation (Max) 56W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD060N03LGBTMA1 Documents

IPD060N03LGBTMA1, IPD060N03LGBTMA1 Datasheet (Total Pages: 12, Size: 1,021.05 KB)
IPU060N03L G Datasheet CoverIPU060N03L G Datasheet Page 2IPU060N03L G Datasheet Page 3IPU060N03L G Datasheet Page 4IPU060N03L G Datasheet Page 5IPU060N03L G Datasheet Page 6IPU060N03L G Datasheet Page 7IPU060N03L G Datasheet Page 8IPU060N03L G Datasheet Page 9IPU060N03L G Datasheet Page 10IPU060N03L G Datasheet Page 11IPU060N03L G Datasheet Page 12

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