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IPD06N03LB G


Part Number IPD06N03LB G
Zouser Part # IPD06N03LB-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 50A TO-252
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPD06N03LB G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock445 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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IPD06N03LB G Specifications

Part Number IPD06N03LB G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 15V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD06N03LB G Documents

IPD06N03LB G, IPD06N03LB G Datasheet (Total Pages: 9, Size: 295.77 KB)
IPD06N03LB G Datasheet CoverIPD06N03LB G Datasheet Page 2IPD06N03LB G Datasheet Page 3IPD06N03LB G Datasheet Page 4IPD06N03LB G Datasheet Page 5IPD06N03LB G Datasheet Page 6IPD06N03LB G Datasheet Page 7IPD06N03LB G Datasheet Page 8IPD06N03LB G Datasheet Page 9

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