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IPD09N03LA G
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IPD09N03LA G


Part Number IPD09N03LA G
Zouser Part # IPD09N03LA-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 25V 50A DPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPD09N03LA G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock535 - More on Order
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Lead-TimeCan Ship Immediately
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IPD09N03LA G Specifications

Part Number IPD09N03LA G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1642pF @ 15V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD09N03LA G Documents

IPD09N03LA G, IPD09N03LA G Datasheet (Total Pages: 12, Size: 531.57 KB)
IPS09N03LA G Datasheet CoverIPS09N03LA G Datasheet Page 2IPS09N03LA G Datasheet Page 3IPS09N03LA G Datasheet Page 4IPS09N03LA G Datasheet Page 5IPS09N03LA G Datasheet Page 6IPS09N03LA G Datasheet Page 7IPS09N03LA G Datasheet Page 8IPS09N03LA G Datasheet Page 9IPS09N03LA G Datasheet Page 10IPS09N03LA G Datasheet Page 11IPS09N03LA G Datasheet Page 12

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