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IPD12N03LB G


Part Number IPD12N03LB G
Zouser Part # IPD12N03LB-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 30A TO-252
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPD12N03LB G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock608 - More on Order
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Lead-TimeCan Ship Immediately
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IPD12N03LB G Specifications

Part Number IPD12N03LB G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD12N03LB G Documents

IPD12N03LB G, IPD12N03LB G Datasheet (Total Pages: 12, Size: 529.21 KB)
IPD12N03LB G Datasheet CoverIPD12N03LB G Datasheet Page 2IPD12N03LB G Datasheet Page 3IPD12N03LB G Datasheet Page 4IPD12N03LB G Datasheet Page 5IPD12N03LB G Datasheet Page 6IPD12N03LB G Datasheet Page 7IPD12N03LB G Datasheet Page 8IPD12N03LB G Datasheet Page 9IPD12N03LB G Datasheet Page 10IPD12N03LB G Datasheet Page 11IPD12N03LB G Datasheet Page 12

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