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IPD250N06N3GBTMA1


Part Number IPD250N06N3GBTMA1
Zouser Part # IPD250N06N3GBTMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 60V 28A TO252-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPD250N06N3GBTMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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IPD250N06N3GBTMA1 Specifications

Part Number IPD250N06N3GBTMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 30V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD250N06N3GBTMA1 Documents

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