Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Enlarge
For Reference Only
IPD60N10S4L12ATMA1 |
|
| Part Number | IPD60N10S4L12ATMA1 |
| Zouser Part # | IPD60N10S4L12ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH TO252-3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPD60N10S4L12ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 6 - Dec 11 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
| In Stock | 52,434 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQ| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
IPD60N10S4L12ATMA1 Specifications
| Part Number | IPD60N10S4L12ATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | Automotive, AEC-Q101, HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 60A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 46µA | |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V | |
| Vgs (Max) | ±16V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3170pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 94W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3-313 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD60N10S4L12ATMA1 Documents
The Products You May Be Interested In
 |
SI7623DN-T1-GE3 | MOSFET P-CH 20V 35A 1212-8 | 458 More on Order |
 |
SQJ409EP-T1_GE3 | MOSFET P-CH 40V 60A POWERPAKSO-8 | 352 More on Order |
 |
IXFV18N60PS | MOSFET N-CH 600V 18A PLUS220-SMD | 340 More on Order |
 |
RS1E321GNTB1 | RS1E321GN IS A POWER MOSFET WITH | 3574 More on Order |
|
FDMS4D5N08LC | FET 80V 116A POWER56 | 643 More on Order |
 |
IXFE34N100 | MOSFET N-CH 1000V 30A ISOPLUS227 | 385 More on Order |
 |
TSM4NB60CH X0G | MOSFET N-CHANNEL 600V 4A TO251 | 327 More on Order |
 |
IPB025N10N3GATMA1 | MOSFET N-CH 100V 180A TO263-7 | 437 More on Order |
 |
SSM3K316T(TE85L,F) | MOSFET N-CH 30V 4A TSM | 524 More on Order |
|
NVTFS6H880NWFTAG | MOSFET N-CH 80V 8WDFN | 427 More on Order |
 |
STY30NK90Z | MOSFET N-CH 900V 26A MAX247 | 642 More on Order |
 |
VN0300L-G-P002 | MOSFET N-CH 30V 640MA TO92-3 | 478 More on Order |