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IPD60R800CEATMA1


Part Number IPD60R800CEATMA1
Zouser Part # IPD60R800CEATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V TO-252-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPD60R800CEATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock207 - More on Order
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IPD60R800CEATMA1 Specifications

Part Number IPD60R800CEATMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™ CE
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 373pF @ 100V
FET Feature -
Power Dissipation (Max) 48W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD60R800CEATMA1 Documents

IPD60R800CEATMA1, IPD60R800CEATMA1 Datasheet (Total Pages: 16, Size: 1,190.22 KB)
IPD60R800CEATMA1 Datasheet CoverIPD60R800CEATMA1 Datasheet Page 2IPD60R800CEATMA1 Datasheet Page 3IPD60R800CEATMA1 Datasheet Page 4IPD60R800CEATMA1 Datasheet Page 5IPD60R800CEATMA1 Datasheet Page 6IPD60R800CEATMA1 Datasheet Page 7IPD60R800CEATMA1 Datasheet Page 8IPD60R800CEATMA1 Datasheet Page 9IPD60R800CEATMA1 Datasheet Page 10IPD60R800CEATMA1 Datasheet Page 11IPD60R800CEATMA1 Datasheet Page 12IPD60R800CEATMA1 Datasheet Page 13IPD60R800CEATMA1 Datasheet Page 14

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