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IPD70P04P409ATMA1


Part Number IPD70P04P409ATMA1
Zouser Part # IPD70P04P409ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH TO252-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPD70P04P409ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock7,732 - More on Order
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IPD70P04P409ATMA1 Specifications

Part Number IPD70P04P409ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.9mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4810pF @ 25V
FET Feature -
Power Dissipation (Max) 75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD70P04P409ATMA1 Documents

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