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IPDD60R190G7XTMA1


Part Number IPDD60R190G7XTMA1
Zouser Part # IPDD60R190G7XTMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET NCH 650V 36A PG-HDSOP-10
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPDD60R190G7XTMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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IPDD60R190G7XTMA1 Specifications

Part Number IPDD60R190G7XTMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™ G7
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id 4V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 718pF @ 400V
FET Feature -
Power Dissipation (Max) 76W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-10-1
Package / Case 10-PowerSOP Module

IPDD60R190G7XTMA1 Documents

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