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IPG20N06S2L35ATMA1 |
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Part Number | IPG20N06S2L35ATMA1 |
Zouser Part # | IPG20N06S2L35ATMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
Description | MOSFET 2N-CH 55V 20A TDSON-8-4 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPG20N06S2L35ATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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In Stock | 6,266 - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQQty. | Unit Price | Ext. Price |
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1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
IPG20N06S2L35ATMA1 Specifications
Part Number | IPG20N06S2L35ATMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Arrays | |
Manufacturer | Infineon Technologies | |
Series | Automotive, AEC-Q101, OptiMOS™ | |
FET Type | 2 N-Channel (Dual) | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 20A | |
Rds On (Max) @ Id, Vgs | 35mOhm @ 15A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 27µA | |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V | |
Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 25V | |
Power - Max | 65W | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 8-PowerVDFN | |
Supplier Device Package | PG-TDSON-8-4 |
IPG20N06S2L35ATMA1 Documents
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