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IPG20N10S4L35AATMA1


Part Number IPG20N10S4L35AATMA1
Zouser Part # IPG20N10S4L35AATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description MOSFET 2N-CH 8TDSON
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPG20N10S4L35AATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock220 - More on Order
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IPG20N10S4L35AATMA1 Specifications

Part Number IPG20N10S4L35AATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1105pF @ 25V
Power - Max 43W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10

IPG20N10S4L35AATMA1 Documents

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