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IPG20N10S4L35ATMA1 |
|
| Part Number | IPG20N10S4L35ATMA1 |
| Zouser Part # | IPG20N10S4L35ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 8TDSON |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPG20N10S4L35ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 6 - Dec 11 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
| In Stock | 12,915 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQ| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
IPG20N10S4L35ATMA1 Specifications
| Part Number | IPG20N10S4L35ATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Infineon Technologies | |
| Series | Automotive, AEC-Q101, OptiMOS™ | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 20A | |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 16µA | |
| Gate Charge (Qg) (Max) @ Vgs | 17.4nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1105pF @ 25V | |
| Power - Max | 43W | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | PG-TDSON-8-4 |
IPG20N10S4L35ATMA1 Documents
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