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IPI086N10N3GXKSA1 |
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Part Number | IPI086N10N3GXKSA1 |
Zouser Part # | IPI086N10N3GXKSA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 100V 80A TO262-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPI086N10N3GXKSA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Mar 23 - Mar 28 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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Quick Inquiry
In Stock | 2,999 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQQty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
IPI086N10N3GXKSA1 Specifications
Part Number | IPI086N10N3GXKSA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 8.6mOhm @ 73A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 75µA | |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3980pF @ 50V | |
FET Feature | - | |
Power Dissipation (Max) | 125W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO262-3 | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
IPI086N10N3GXKSA1 Documents

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