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IPI100N06S3-03


Part Number IPI100N06S3-03
Zouser Part # IPI100N06S3-03
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 55V 100A I2PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPI100N06S3-03 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock355 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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IPI100N06S3-03 Specifications

Part Number IPI100N06S3-03
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 480nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 21620pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IPI100N06S3-03 Documents

IPI100N06S3-03, IPI100N06S3-03 Datasheet (Total Pages: 9, Size: 188.23 KB)
IPP100N06S3-03 Datasheet CoverIPP100N06S3-03 Datasheet Page 2IPP100N06S3-03 Datasheet Page 3IPP100N06S3-03 Datasheet Page 4IPP100N06S3-03 Datasheet Page 5IPP100N06S3-03 Datasheet Page 6IPP100N06S3-03 Datasheet Page 7IPP100N06S3-03 Datasheet Page 8IPP100N06S3-03 Datasheet Page 9

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