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IPI100N06S3L04XK


Part Number IPI100N06S3L04XK
Zouser Part # IPI100N06S3L04XK
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 55V 100A TO-262
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPI100N06S3L04XK PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock556 - More on Order
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Lead-TimeTo be Confirmed
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IPI100N06S3L04XK Specifications

Part Number IPI100N06S3L04XK
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 362nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 17270pF @ 25V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IPI100N06S3L04XK Documents

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