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IPI65R099C6XKSA1


Part Number IPI65R099C6XKSA1
Zouser Part # IPI65R099C6XKSA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 650V 38A TO-262
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPI65R099C6XKSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock472 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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IPI65R099C6XKSA1 Specifications

Part Number IPI65R099C6XKSA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 12.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 127nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 100V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IPI65R099C6XKSA1 Documents

IPI65R099C6XKSA1, IPI65R099C6XKSA1 Datasheet (Total Pages: 20, Size: 3,828.78 KB)
IPP65R099C6XKSA1 Datasheet CoverIPP65R099C6XKSA1 Datasheet Page 2IPP65R099C6XKSA1 Datasheet Page 3IPP65R099C6XKSA1 Datasheet Page 4IPP65R099C6XKSA1 Datasheet Page 5IPP65R099C6XKSA1 Datasheet Page 6IPP65R099C6XKSA1 Datasheet Page 7IPP65R099C6XKSA1 Datasheet Page 8IPP65R099C6XKSA1 Datasheet Page 9IPP65R099C6XKSA1 Datasheet Page 10IPP65R099C6XKSA1 Datasheet Page 11IPP65R099C6XKSA1 Datasheet Page 12IPP65R099C6XKSA1 Datasheet Page 13IPP65R099C6XKSA1 Datasheet Page 14

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