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IPN50R1K4CEATMA1


Part Number IPN50R1K4CEATMA1
Zouser Part # IPN50R1K4CEATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description CONSUMER
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPN50R1K4CEATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock355 - More on Order
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Lead-TimeTo be Confirmed
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IPN50R1K4CEATMA1 Specifications

Part Number IPN50R1K4CEATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™ CE
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 178pF @ 100V
FET Feature -
Power Dissipation (Max) 5W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case SOT-223-3

IPN50R1K4CEATMA1 Documents

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