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IPP04CN10NG


Part Number IPP04CN10NG
Zouser Part # IPP04CN10NG
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 100A TO220-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPP04CN10NG PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock448 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
Minimum1

Pricing (USD)

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100$ 0.0000$ 0.0000
500$ 0.0000$ 0.0000
1000$ 0.0000$ 0.0000

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IPP04CN10NG Specifications

Part Number IPP04CN10NG
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 50V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3

IPP04CN10NG Documents

IPP04CN10NG, IPP04CN10NG Datasheet (Total Pages: 11, Size: 496.1 KB)
IPP04CN10NG Datasheet CoverIPP04CN10NG Datasheet Page 2IPP04CN10NG Datasheet Page 3IPP04CN10NG Datasheet Page 4IPP04CN10NG Datasheet Page 5IPP04CN10NG Datasheet Page 6IPP04CN10NG Datasheet Page 7IPP04CN10NG Datasheet Page 8IPP04CN10NG Datasheet Page 9IPP04CN10NG Datasheet Page 10IPP04CN10NG Datasheet Page 11

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