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IPP05CN10L G


Part Number IPP05CN10L G
Zouser Part # IPP05CN10L-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 100A TO220-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPP05CN10L G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock318 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
Minimum1

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1000$ 0.0000$ 0.0000

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IPP05CN10L G Specifications

Part Number IPP05CN10L G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 163nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 50V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3

IPP05CN10L G Documents

IPP05CN10L G, IPP05CN10L G Datasheet (Total Pages: 9, Size: 324.26 KB)
IPP05CN10L G Datasheet CoverIPP05CN10L G Datasheet Page 2IPP05CN10L G Datasheet Page 3IPP05CN10L G Datasheet Page 4IPP05CN10L G Datasheet Page 5IPP05CN10L G Datasheet Page 6IPP05CN10L G Datasheet Page 7IPP05CN10L G Datasheet Page 8IPP05CN10L G Datasheet Page 9

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