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IPP06CNE8N G


Part Number IPP06CNE8N G
Zouser Part # IPP06CNE8N-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 85V 100A TO-220
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPP06CNE8N G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock359 - More on Order
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Lead-TimeTo be Confirmed
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IPP06CNE8N G Specifications

Part Number IPP06CNE8N G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 138nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9240pF @ 40V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3

IPP06CNE8N G Documents

IPP06CNE8N G, IPP06CNE8N G Datasheet (Total Pages: 11, Size: 358.76 KB)
IPP06CNE8N G Datasheet CoverIPP06CNE8N G Datasheet Page 2IPP06CNE8N G Datasheet Page 3IPP06CNE8N G Datasheet Page 4IPP06CNE8N G Datasheet Page 5IPP06CNE8N G Datasheet Page 6IPP06CNE8N G Datasheet Page 7IPP06CNE8N G Datasheet Page 8IPP06CNE8N G Datasheet Page 9IPP06CNE8N G Datasheet Page 10IPP06CNE8N G Datasheet Page 11

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