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IPP080N06N G


Part Number IPP080N06N G
Zouser Part # IPP080N06N-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 60V 80A TO-220
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPP080N06N G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock460 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
Minimum1

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IPP080N06N G Specifications

Part Number IPP080N06N G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 30V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3

IPP080N06N G Documents

IPP080N06N G, IPP080N06N G Datasheet (Total Pages: 10, Size: 739.32 KB)
IPP080N06N G Datasheet CoverIPP080N06N G Datasheet Page 2IPP080N06N G Datasheet Page 3IPP080N06N G Datasheet Page 4IPP080N06N G Datasheet Page 5IPP080N06N G Datasheet Page 6IPP080N06N G Datasheet Page 7IPP080N06N G Datasheet Page 8IPP080N06N G Datasheet Page 9IPP080N06N G Datasheet Page 10

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